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| Features * * * * * * * * Up to 33 dBm Output Power in CW Mode High Power Added Efficiency (PAE) Single Supply Operation at 2.4 V (1 W) or 3.2 V (2 W) Current Consumption in Power-down Mode 10 A No External Power Supply Switch Required Power Ramp Control Simple Input and Output Matching for Maximum Flexibility SMD Package (PSSOP16 with Heat Slug) Electrostatic sensitive device. Observe precautions for handling. SiGe Power Amplifier for CW Applications T0930 Description The T0930 is a monolithic integrated power amplifier IC. The device is manufactured with Atmel's Silicon-Germanium (SiGe) technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter readers and ISM phones. With a single supply voltage of 2.4 V to 3.4 V and a neglectable leakage current in power-down mode, the pager amplifier only needs few external components and thus helps to reduce system costs. It is suited for operation in CW mode. Figure 1. Block Diagram VCC1 5 1 VCC2 2 3 GND 4 10 16 11 RFin (900 MHz) 8 VCTL VCC,CTL GND 9 7 12 6 Match Match Match 13 14 15 Harmonic tuning RFout/VCC3 (900 MHz) Control 4722A-SIGE-06/03 1 Pin Configuration Figure 2. Pinning PSSOP16 VCC2 VCC2 VCC2 GND VCC1 RFIN GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 GND RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 GND VCC,CTL T0930 VCTL Pin Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VCC2 VCC2 VCC2 GND VCC1 RFIN GND VCTL VCC,CTL GND RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 RFOUT/VCC3 GND Function Supply voltage 2 Supply voltage 2 Supply voltage 2 Ground Supply voltage 1 RF input Ground (control) Control input Supply voltage for control Ground (optional) RF output/supply voltage 3 RF output/supply voltage 3 RF output/supply voltage 3 RF output/supply voltage 3 RF output/harmonic tuning Ground 2 T0930 4722A-SIGE-06/03 T0930 Absolute Maximum Ratings All voltages refer to GND Parameters Supply voltage VCC at VCTL = 1.7 V, Pin 5 Pin 1, 2, 3 Pins 11, 12, 13, 14 and 15 Pin 9 Input power, Pin 6 Gain control voltage , Pin 8 Duty cycle for operation Junction temperature Storage temperature Note: Tj Tstg -40 (1) Symbol VCC1 VCC2 VCC3 VCC, CTL Pin VCTL Min. Max. 4 4 4 4 12 Unit V dBm V % C C 0 2 100 +150 +150 1. The gain control voltage should always be 0.2 V below the supply voltage. RF should be applied before ramp-up. Operating Range All voltages referred to GND Parameters Supply voltage VCC(1) 1 W application Supply voltage VCC(1) 2 W application Ambient temperature Input frequency Note: Symbol VCC1, VCC2, VCC3, VCC, CTL VCC1, VCC2, VCC3, VCC, CTL Tamb fin Min. 1.8 2.6 -25 900 Typ. 2.4 3.2 Max. 3 3.6 +85 Unit V V C MHz 1. The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up. 3 4722A-SIGE-06/03 Electrical Characteristics for 1 W Application VCC = VCC1, ... , VCC3, VCC, CTL = +2.4 V, VCTL = 1.7 V, Tamb = +25C, 50-W input and 50-W external output match No. Parameters 1 1.1 1.2 Power Supply Supply voltage Current consumption in active mode Current consumption (leakage current) in power-down mode RF Input Frequency range Input impedance Input power Input VSWR(1) RF Output Output impedance(1) Output power in normal conditions Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Isolation between input and output Power Control Control curve Power control range Control voltage range Control current Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL ICTL 50 0.3 2.0 200 150 dB/V dB V A C C A A Pout = 30 dBm RBW = 100 kHz Pin = 0 to 10 dBm VCTL 0.2 V (power down) Pin = 5 dBm RL = RG = 50 W VCC = 2.4 V, Tamb = +25C VCC = 1.8 V, Tamb = +25C VCTL = 0.3 V VCC = 2.4 V, Pout = 27 dBm VCC = 2.4 V, Pout = 30 dBm Temp = -25 to +85C no spurious -60 dBc Pout = 30 dBm, all phases PAE PAE VSWR VSWR 2fo 3fo -73 -85 Zo 50 W C Pin = 0 to 12 dBm Pout = 30 dBm (1) Test Conditions Pin Symbol VCC Min. 1.8 Typ. 2.4 0.9 Max. 3.0 Unit V A Type* A A Pout = 30 dBm PAE = 47% VCTL 0.2 V I 1.3 2 2.1 2.2 2.3 2.4 3 3.1 I 10 A A fin Zi Pin 880 900 50 5 935 12 2:1 MHz W dBm A C C C 3.2 Pout Pout 30 27 - 20 40 47 10:1 10:1 -35 -35 -70 -82 0.5 50 dBm dBm dBm % % A 3.3 3.4 3.5 3.6 3.7 3.8 3.9 A A C C dBc dBc dBm dBm ms dB A A C A C 3.10 Rise and fall time 3.11 4 4.1 4.2 4.3 4.4 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. With external matching (see "Application Circuit"). 4 T0930 4722A-SIGE-06/03 T0930 Electrical Characteristics for 2 W Application VCC = VCC1, ... , VCC3, VCC, CTL = +3.2 V, VCTL = 1.9 V, Tamb = +25C, 50-W input and 50-W external output match No. Parameters 5 5.1 5.2 Power Supply Supply voltage Current consumption in active mode Current consumption (leakage current) in power-down mode RF Input Frequency range Input impedance Input power Input VSWR(1) RF Output Output impedance(1) Output power in normal conditions Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Isolation between input and output Power Control Control curve Power control range Control voltage range Control current Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL ICTL 50 0.3 2.0 200 150 dB/V dB V A C C A A Pout = 33 dBm RBW = 100 kHz Pin = 0 to 10 dBm VCTL 0.2 V (power down) Pin = 5 dBm, RL = RG = 50 W VCC = 3.2 V, Tamb = +25C VCC = 2.2 V, Tamb = +25C VCTL = 0.3 V VCC = 3.2 V, Pout = 27 dBm Temp = -25 to + 85C no spurious -60 dBc Pout = 33 dBm, all phases PAE VSWR VSWR 2fo 3fo -73 -85 Zo Pout Pout 50 33 30 - 20 47 10:1 10:1 -35 -35 -70 -82 0.5 50 dBc dBc dBm dBm s dB W dBm dBm dBm % C A A A C C A A C A C Pin = 0 to 12 dBm Pout = 30 dBm (1) Test Conditions Pin Symbol VCC Min. 2.6 Typ. 3.2 1.33 Max. 3.6 Unit V A Type* A A Pout = 33 dBm PAE = 47% VCTL 0.2 V I 5.3 6 6.1 6.2 6.3 6.4 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 I 10 A A fin Zi Pin 880 900 50 5 935 12 2:1 MHz W dBm A C C C 7.10 Rise and fall time 7.11 8 8.1 8.2 8.3 8.4 *) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter Notes: 1. With external matching (see "Application Circuit"). 5 4722A-SIGE-06/03 Figure 3. Pout and PAE versus VCC (1 W Application) 50 PAE 45 40 Pout [dBm], PAE [%] 35 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 VCC [V] 2.8 3.8 3.2 3.4 3.6 Pout Figure 4. Pout and PAE versus Vramp (1 W Application) 50 PAE 40 Pout Pout [dBm], PAE [%] 30 20 10 0 -10 -20 1.00 1.25 1.50 Vramp [V] 1.75 2.00 6 T0930 4722A-SIGE-06/03 T0930 Figure 5. Pout and PAE versus VCC (2 W Application) 50 PAE 45 40 35 Pout [dBm], PAE [%] Pout 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 2.8 VCC [V] 3.0 3.2 3.4 3.6 3.8 4.0 Figure 6. Pout and PAE versus Vramp (2 W Application) 50 40 30 20 Pout [dBm], PAE [%] PAE Pout 10 0 -10 -20 -30 -40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 Vramp [V] 1.40 1.50 1.60 1.70 1.80 1.90 2.00 7 4722A-SIGE-06/03 Application Circuit Figure 7. Application Circuit GSM Pager (900 MHz) V CC C1 C2 C13 220 nF T1 T2 2 3 15 C12 220 nF C11 100 pF T6 1/4 wavelength line T7 C9 8.2 pF AVX T9 220 nF 220 nF C3 39 pF AVX T3 1 16 harmonic tuning T8 14 15 pF AVX C4 C5 4 13 12 11 10 C10 RFOUT 56 pF T4 5 6 RFIN 900 MHz 12 pF L1 3.3 nH V CTL T5 7 Control C6 22 pF 8 9 V CC,CTL C7 22 pF C8 1 nF Microstrip line : FR4 ; Epsilon(r) : 4.3 ; metal Cu : 35 mm distance 1. layer -rf ground : 0.5 mm l/mm l/mm w/mm T1 20.5 x 1.0 T6 43.1 T2 1.3 x 1.0 T7 6.0 T3 14.8 x 0.5 T8 10.0 T4 14.2 x 0.5 T9 4.0 T5 2.5 x 1.0 w/mm x x x x 0.5 1.25 0.5 1.25 8 T0930 4722A-SIGE-06/03 T0930 Ordering Information Extended Type Number T0930-TJT T0930-TJQ Package PSSOP16 PSSOP16 Remarks Tube Taped and reeled Package Information Package PSSOP16 Dimensions in mm 4.98 4.80 1.60 1.45 0.25 0.64 4.48 16 9 0.10 0.00 3.91 6.02 0.2 2.21 1.80 technical drawings according to DIN specifications 1 3.12 2.72 8 9 4722A-SIGE-06/03 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131 Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 Biometrics/Imaging/Hi-Rel MPU/ High Speed Converters/RF Datacom Avenue de Rochepleine BP 123 38521 Saint-Egreve Cedex, France Tel: (33) 4-76-58-30-00 Fax: (33) 4-76-58-34-80 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 1150 East Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 Tel: 1(719) 576-3300 Fax: 1(719) 540-1759 Scottish Enterprise Technology Park Maxwell Building East Kilbride G75 0QR, Scotland Tel: (44) 1355-803-000 Fax: (44) 1355-242-743 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 literature@atmel.com Web Site http://www.atmel.com Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems. (c) Atmel Corporation 2003. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper. 4722A-SIGE-06/03 xM |
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